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AO4421 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4421 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4412 is Pb-free (meets ROHS & Sony 259 specifications). AO4421L is a Green Product ordering option. AO4421 and AO4421L are electrically identical.
Features
VDS (V) = -60V ID = -6.2 A (VGS = -10V) RDS(ON) < 40m (VGS = -10V) RDS(ON) < 50m (VGS = -4.5V)
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -60 20 -6.2 -5 -40 3.1 2 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 24 54 21
Max 40 75 30
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4421, AO4421L
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-6.2A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-48V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-6.2A TJ=125C -1 -40 32 53 40 18 -0.74 40 70 50 -1 -4.2 2900 -2 Min -60 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns 42 ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz
2417 179 120 1.9 46.5
2.3 55
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=-10V, VDS=-30V, ID=-6.2A
22.7 9.1 9.2 9.8 6.1 44 12.7 34 47
VGS=-10V, VDS=-30V, RL=4.7, RGEN=3
IF=-6.2A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-6.2A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4421, AO4421L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
25 -10V 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 45 Normalized On-Resistance VGS=-4.5V RDS(ON) (m) 40 2.00 1.80 1.60 1.40 1.20 1.00 0.80 0 5 10 15 20 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=-6.2A 1.0E+00 1.0E-01 -IS (A) 125C 1.0E-02 1.0E-03 1.0E-04 25C 25C 1.0E-05 1.0E-06 2 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C VGS=-4.5V ID=-5A VGS=-10V ID=-6.2A VGS=-3V -4V -4.5V -5V -6V -ID (A) 30 25 -3.5V -ID(A) 20 15 10 125C 5 25C 0 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics VDS=-5V
35 VGS=-10V
30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 RDS(ON) (m) 70 60 50 40 30 20
Alpha & Omega Semiconductor, Ltd.
AO4421, AO4421L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10 8 -VGS (Volts) 6 4 2 500 0 0 10 20 30 40 50 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 10 20 30 40 50 60 -VDS (Volts) Figure 8: Capacitance Characteristics VDS=-30V ID=-6.2A Capacitance (pF) 3500 3000 2500 2000 1500 1000 Coss Crss Ciss
100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 100s 1ms 10ms 10s Power (W)
40 TJ(Max)=150C TA=25C 30
-ID (Amps)
10.0
20
1.0
1s 10s DC
10
0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.

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